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IGBT MODULE ( N series ) n Features
* Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (4~5 Times Rated Current)
n Outline Drawing
n Applications
* High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply
n Maximum Ratings and Characteristics
* Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 20 50 100 50 100 400 +150 -40 +125 2500 3.5 3.5 Units V V A W C C V Nm
n Equivalent Circuit
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
* Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=50mA VGE=15V IC=50A VGE=0V VCE=10V f=1MHz VCC=600V IC=50A VGE= 15V RG=24 IF=50A VGE=0V IF=50A Min. Typ. Max. 1.0 15 7.5 3.3 Units mA A V V pF 1.2 0.6 1.5 0.5 3.0 350
4.5 8000 2900 2580 0.65 0.25 0.85 0.35
s V ns
* Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.31 0.85 Units C/W
0.05
Collector current vs. Collector-Emitter voltage T j=25C 125 V GE =20V,15V,12V,10V 100 100
C
Collector current vs. Collector-Emitter voltage T j=125C 125 V GE =20V,15V,12V,10V,
C
[A]
Collector current : I
50
Collector current : I
75
[A]
75 50 8V 25 8V 25 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V]
0
0
1
2
3
4
5
Collector-Emitter voltage : V CE [V]
Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 10
CE
Collector-Emitter vs. Gate-Emitter voltage T j=125C
[V]
CE
8
[V]
8
Collector-Emitter voltage : V
6
Collector-Emitter voltage : V
6
4
IC= 100A 50A 25A
4
IC= 100A 50A 25A
2
2
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current V CC =600V, R G =24 , V GE =15V, T j=25C 1000 t off t on 1000
Switching time vs. Collector current V CC =600V, R G =24 , V GE =15V, Tj=125C t off t on tf tr
, t r , t off , t f [nsec]
tf tr
on
on
100
, t r , t off , t f [nsec]
100
Switching time : t
10 0 25 50 Collector current : I C [A] 75 100
Switching time : t
10 0 25 50 Collector current : I C [A] 75 100
Switching time vs. R G V CC =600V, I C =50A, V GE =15V, T j=25C 1000 t off t on
Dynamic input characteristics T j=25C 25 V CC =400V
, t r , t off , t f [nsec]
[V]
CE
800
600V 800V
20
1000 tr tf
Collector-Emitter voltage : V
600
15
Switching time : t
on
400
10
200
100
5
10 Gate resistance : R G [ ]
100
0
0
200
400
600
0
Gate charge : Q G [nC]
Forward current vs. Forward voltage V GE = O V 125 T j=125C 25C 1000
Reverse recovery characteristics t rr , I rr vs. I F
[A]
100
[nsec]
[A]
t rr 125C t rr 25C 100
rr
F
Reverse recovery current : I
Forward current : I
75
50
Reverse recovery time
:t
rr
I rr 125C I rr 25C
25
0
0
1
2
3
4
5
10
0
25
50 Forward current : I F [A]
75
100
Forward voltage : V F [V]
Transient thermal resistance 500
Reversed biased safe operating area +V GE =15V, -V GE <15V, T j<125C, R G >24
[C/W]
1
Diode
C
400
th(j-c)
Collector current : I
IGBT
[A]
300
SCSOA (non-repetitive pulse)
Thermal resistance : R
0,1
200
100 RBSOA (Repetitive pulse)
0,01 0,001
0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V]
Switching loss vs. Collector current V CC =600V, R G =24 , V GE =15V 20
Capacitance vs. Collector-Emitter voltage T j=25C
, E off , E rr [mJ/cycle]
15
, C oes , C res [nF]
E on 125C E off 125C
10 C ies
on
E on 25C
Switching loss : E
Capacitance : C
ies
10
1 C oes C res
E off 25C 5 E rr 125C E rr 25C 0 0 25 50 Collector Current : I C [A] 75 100
0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V]
Fuji Electric GmbH
Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax)

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